Authors
Yuchen Zhao, Carl Labergère, Benoît Panicaud, Jean-Luc Grosseau-Poussard, Philippe Goudeau,
Title
Modeling of stress and strain fields induced during the Smart-Cut process on silicon. Influence of different couplings for diffusion of hydrogen at a microscopic scale
In
Advanced Materials Research
Volume
996
Pages
707–712
Publisher
Trans Tech Publications
Year
2014
Indexed by
Abstract
The Smart-Cut technology consists in the increasing of external temperature and pressure imposed by the diffusion of hydrogen ions within silicon substrates leading to a wafer splitting. In the present work, we studied the evolution of the stress field in the crystalline lattice of silicon, the diffusion of hydrogen ions that can lead to the growth and coalescence of cavities. Meanwhile, we test several models and simulate these phenomena by a numerical approach, in order to compare the results to experimental observations.
Affiliations
Offprint